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Competitive Hole Transfer from CdSe Quantum Dots to Thiol Ligands in CdSe-Cobaloxime Sensitized NiO Films Used as Photocathodes for H-2 Evolution
2017 (English)In: ACS ENERGY LETTERS, ISSN 2380-8195, Vol. 2, no 11, 2576-2580 p.Article in journal (Refereed) Published
Abstract [en]

Quantum dot (QD) sensitized NiO photocathodes rely on efficient photoinduced hole injection into the NiO valence band. A system of a mesoporous NiO film co-sensitized with CdSe QDs and a molecular proton reduction catalyst was studied. While successful electron transfer from the excited QDs to the catalyst is observed, most of the photogenerated holes are instead quenched very rapidly (ps) by hole trapping at the surface thiols of the capping agent used as linker molecules. We confirmed our conclusion by first using a thiol free capping agent and second varying the thiol concentration on the QD's surface. The later resulted in faster hole trapping as the thiol concentration increased. We suggest that this hole trapping by the linker limits the H-2 yield for this photocathode in a device.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2017. Vol. 2, no 11, 2576-2580 p.
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-219509DOI: 10.1021/acsenergylett.7b00730ISI: 000415914100009Scopus ID: 2-s2.0-85033564859OAI: oai:DiVA.org:kth-219509DiVA: diva2:1164245
Funder
Swedish Energy Agency, 11674-5Swedish Research Council, 2014-5921Knut and Alice Wallenberg Foundation, 2011.0067
Note

QC 20171211

Available from: 2017-12-11 Created: 2017-12-11 Last updated: 2017-12-11Bibliographically approved

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