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A wafer-scale Ni-salicide contact technology on n-type 4H-SiC
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics.
KTH, School of Information and Communication Technology (ICT), Electronics.ORCID iD: 0000-0002-7510-9639
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2017 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 6, no 4, p. P197-P200Article in journal (Refereed) Published
Abstract [en]

A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5 × 10−6 Ω · cm2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale which saves time and cost.

Place, publisher, year, edition, pages
Electrochemical Society, 2017. Vol. 6, no 4, p. P197-P200
National Category
Other Engineering and Technologies
Identifiers
URN: urn:nbn:se:kth:diva-219898DOI: 10.1149/2.0041705jssISI: 000418886800004Scopus ID: 2-s2.0-85036466021OAI: oai:DiVA.org:kth-219898DiVA, id: diva2:1166481
Note

QC 20171215

Available from: 2017-12-15 Created: 2017-12-15 Last updated: 2018-01-11Bibliographically approved

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Elahipanah, HosseinAsadollahi, AliEkström, MattiasSalemi, ArashZetterling, Carl-Mikael

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Elahipanah, HosseinAsadollahi, AliEkström, MattiasSalemi, ArashZetterling, Carl-MikaelÖstling, Mikael
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Integrated devices and circuitsElectronics
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