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Influence of metal electrodes on c-axis orientation of AlN thin films deposited by DC magnetron sputtering
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2017 (English)In: Surface and Interface Analysis, ISSN 0142-2421, E-ISSN 1096-9918, Vol. 49, no 9, p. 885-891Article in journal (Refereed) Published
Abstract [en]

Nanocrystalline aluminum nitride (AlN) thin films were deposited on two types of metallic seed layers on silicon substrates, (111) textured Pt and (110) Mo, by reactive DC magnetron sputtering at low temperature (200 °C). Both textured films of Pt and Mo promote nucleation, thereby improving the crystallinity and epitaxial growth condition for AlN thin films. The deposited films were examined by X-ray diffraction, scanning electron microscopy and atomic force microscopy techniques. The results indicated that the preferred orientation of crystallites greatly depends upon the kinetic energy of the sputtered species (target power) and seed layers used. Furthermore, AlN thin films with c-axis perpendicular to the substrate grew on both types of metal electrodes at all power levels larger than 100 W. By comparing the structural properties and compressive stresses at perfect c-axis orientation conditions, it is evident that AlN films deposited on (110) oriented Mo substrates exhibited superior properties as compared with Pt/Ti seed layers. Furthermore, less values of compressive stresses (−3 GPa) as compared with Pt/Ti substrates (−7.08 GPa) make Mo preferentially better candidate to be employed in the field of suspended Micro/Nano - electromechanical systems (MEMS/NEMS) for piezoelectric devices.

Place, publisher, year, edition, pages
John Wiley and Sons Ltd , 2017. Vol. 49, no 9, p. 885-891
Keywords [en]
AlN, c-axis orientation, compressive stresses, metal electrodes, reactive sputtering, Aluminum coatings, Aluminum nitride, Atomic force microscopy, Compressive stress, Electrodes, Electromechanical devices, Epitaxial growth, Kinetic energy, Kinetics, Magnetron sputtering, Metals, Molybdenum, Nanocrystalline silicon, Nanocrystals, Platinum, Platinum alloys, Scanning electron microscopy, Sputtering, Substrates, Temperature, X ray diffraction, C-axis orientations, Dc magnetron sputtering, Electromechanical systems, Nanocrystalline aluminum, Preferred orientations, Reactive DC magnetron sputtering, Silicon substrates, Thin films
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-216202DOI: 10.1002/sia.6237ISI: 000407288800012Scopus ID: 2-s2.0-85018575479OAI: oai:DiVA.org:kth-216202DiVA, id: diva2:1167232
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QC 20171218

Available from: 2017-12-18 Created: 2017-12-18 Last updated: 2017-12-18Bibliographically approved

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He, Sailing

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