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15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-7510-9639
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.ORCID iD: 0000-0001-5521-4135
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-8108-2631
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2018 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 1, 63-66 p.Article in journal (Refereed) Published
Abstract [en]

Implantation-free mesa-etched ultra-high-voltage (0.08 mm(2)) 4H-SiC bipolar junction transistors (BJTs) with record current gain of 139 are fabricated, measured, and analyzed by device simulation. High current gain is achieved by optimized surface passivation and optimal cell geometries. The area-optimized junction termination extension is utilized to obtain a high and stable breakdown voltage without ion implantation. The open-base blocking voltage of 15.8 kV at a leakage current density of 0.1 mA/cm(2) is achieved. Different cell geometries (single finger, square, and hexagon cell geometries) are also compared.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018. Vol. 39, no 1, 63-66 p.
Keyword [en]
Ultra-high-voltage 4H-SiC BJT, implantation-free, area-optimized junction termination extension (O-JTE), current gain, on-resistance, optimal cell geometries, surface passivation
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-220997DOI: 10.1109/LED.2017.2774139ISI: 000418874200016OAI: oai:DiVA.org:kth-220997DiVA: diva2:1173045
Funder
StandUpSwedish Energy Agency
Note

QC 20180111

Available from: 2018-01-11 Created: 2018-01-11 Last updated: 2018-01-11Bibliographically approved

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Salemi, ArashElahipanah, HosseinJacobs, Keijo

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Salemi, ArashElahipanah, HosseinJacobs, KeijoZetterling, Carl-MikaelÖstling, Mikael
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School of Information and Communication Technology (ICT)Integrated devices and circuitsElectric Power and Energy Systems
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IEEE Electron Device Letters
Electrical Engineering, Electronic Engineering, Information Engineering

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