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Ultra-high efficiency piezotronic sensing using piezo-engineered FETs
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2018 (English)In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 270, p. 240-244Article in journal (Refereed) Published
Abstract [en]

A large piezoelectric effect in the c-axis of Zinc Oxide (ZnO) nanorods (NRs) which are vertically aligned to the gate of an nMOSFET is demonstrated. A controlled mechanical pressure was applied to create piezoelectric polarization in the structure and induce charges in the transistor's channel. The resultant piezo-induced charges could modulate the electrostatics of the transistor channel and sense the pressure. ZnO NRs were grown using hydrothermal and microwave-assisted methods and the piezoelectric quality of each one was evaluated. The NRs grown by sequential microwave–assisted growth demonstrated the optimum response. An induced piezo-potential as large as 3.5 V was measured on the transistor's gate when a vertical force of 1.5 N (10 MPa) was applied to the array of NRs and the corresponding piezoelectric coefficient of 66 pC/N was calculated. Such a large enhancement in the piezoelectricity (five-fold increase compared to ZnO thin films) attributes to the high crystal quality of the ZnO NRs, high mechanical flexibility, as well as low potential loss at the electrical contacts of the NRs to the device.

Place, publisher, year, edition, pages
Elsevier, 2018. Vol. 270, p. 240-244
Keyword [en]
Dipole, Force sensing, MOSFET, Piezoelectric, Piezotronics, ZnO nanorods
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-221148DOI: 10.1016/j.sna.2018.01.002ISI: 000424388800045Scopus ID: 2-s2.0-85040012807OAI: oai:DiVA.org:kth-221148DiVA, id: diva2:1174276
Note

QC 20180115

Available from: 2018-01-15 Created: 2018-01-15 Last updated: 2018-03-05Bibliographically approved

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