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Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers
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2017 (English)In: 2017 International Semiconductor Conference (CAS), Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 63-66, article id 8101154Conference paper, Published paper (Refereed)
Abstract [en]

The photosensing properties related to the structure of GeSi/TiO2 multilayers prepared under different conditions are studied. TiO2 cap/(GeSi/TiO2)2 multilayers (ML) were deposited by magnetron sputtering (MS) and annealed by rapid thermal annealing. Trilayers of TiO2 cap/GeSi/TiO2 (TL) were also deposited using reactive high power impulse MS (HiPIMS) for TiO2 layers and dc MS for the GeSi layer. For TL samples a two-step annealing was employed, one before and the second after depositing TiO2 cap. Structure and morphology characterization (X-ray diffraction, scanning and transmission electron microscopy) was carried out and photocurrent measurements (voltage dependences, spectral curves) were performed. The annealed ML samples are formed of GeSi NCs with 5-10 nm sizes, while in the annealed TL samples, the GeSi NCs are larger (20-30 nm). These morphologies determine the multilayers photosensing properties in VIS-NIR of ML structures and in UV in TL ones, respectively.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017. p. 63-66, article id 8101154
Keywords [en]
GeSi nanocrystals, photosensing, TiO2
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Identifiers
URN: urn:nbn:se:kth:diva-221761DOI: 10.1109/SMICND.2017.8101154ISI: 000425844500009Scopus ID: 2-s2.0-85040526845ISBN: 9781509039852 OAI: oai:DiVA.org:kth-221761DiVA, id: diva2:1177078
Conference
40th International Semiconductor Conference, CAS 2017, Sinaia, Romania, 11 October 2017 through 14 October 2017
Note

QC 20180124

Available from: 2018-01-24 Created: 2018-01-24 Last updated: 2018-03-14Bibliographically approved

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Gudmundsson, Jon Tomas

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CiteExportLink to record
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  • apa
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