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Influence of MgO barrier quality on spin-transfer torque in magnetic tunnel junctions
KTH, School of Engineering Sciences (SCI), Applied Physics. University of Gothenburg, Sweden.ORCID iD: 0000-0002-3513-6608
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 2, article id 022406Article in journal (Refereed) Published
Abstract [en]

We studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2018. Vol. 112, no 2, article id 022406
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URN: urn:nbn:se:kth:diva-221787DOI: 10.1063/1.5005893ISI: 000422965000031Scopus ID: 2-s2.0-85040519728OAI: oai:DiVA.org:kth-221787DiVA, id: diva2:1177400
Funder
Swedish Foundation for Strategic Research Swedish Research Council
Note

QC 20180125

Available from: 2018-01-25 Created: 2018-01-25 Last updated: 2018-02-02Bibliographically approved

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Åkerman, Johan

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