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Realization of a Planar Power Circuit With Silicon Carbide MOSFETs on Printed Circuit Board
KTH, School of Electrical Engineering and Computer Science (EECS), Electric Power and Energy Systems.ORCID iD: 0000-0003-0933-6945
KTH, Superseded Departments (pre-2005), Electrical Systems.ORCID iD: 0000-0002-1755-1365
The Mads Clausen Institute, SDU Electrical Engineering, Sonderborg, Denmark.
(English)Manuscript (preprint) (Other academic)
Abstract [en]

Silicon Carbide (SiC) MOSFETs offer excellent properties as switches in power converters. However, the package of the device is an issue that prevents utilizing the advantages of SiC, as for instance fast switching speed. The packages of currently available SiC devices are the same as those previously used for silicon devices with moderate electrical and thermal characteristics resulting in accelerated aging and reliability issues. Furthermore, the parasitic inductance caused by the package, limits the switching time and operating frequency. By excluding the package, the parasitic inductances will be eliminated to a large extent. In this study, the procedure of manufacturing a half-bridge planar power module, using four SiC MOSFET bare dies and PCB, is described. According to simulations in ANSYS-Q3D, the parasitic inductance Lstray of the structureis approximately 96% lower than most commercial half-bridge modules. It is also shown that double-side cooling can bee mployed for the proposed module if substrates with low thermal resistance are used.

Keywords [en]
SiC MOSFET, planar power module, bare die, ultra-low parasitic inductance, double-sided cooling, PCB, DBC, high power density
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-222244OAI: oai:DiVA.org:kth-222244DiVA, id: diva2:1180142
Note

QC 20180209

Available from: 2018-02-05 Created: 2018-02-05 Last updated: 2018-02-09Bibliographically approved

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Risseh, ArashNee, Hans-Peter

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