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Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT).
2018 (English)In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 6, no 1, p. 139-145Article in journal (Refereed) Published
Abstract [en]

4H-SiC p-i-n photodiodes with various mesa areas (40 000 mu m(2), 2500 mu m(2), 1600 mu m(2), and 400 mu m(2)) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 degrees C, 400 degrees C, and 500 degrees C. The capacitance and photo current (at 365 nm) of the photodiodes are directly proportional to the area. However, the dark current density increases as the device is scaled down due to the perimeter surface recombination effect. The photo to dark current ratio at the full depletion voltage of the intrinsic layer (-2.7 V) of the photodiode at 500 degrees C decreases similar to 7 times as the size of the photodiode scales down 100 times. The static and dynamic behavior of the photodiodes are modeled with SPICE parameters at the four temperatures.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018. Vol. 6, no 1, p. 139-145
Keywords [en]
4H-SiC, photodiode, high temperature, scaling
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-222398DOI: 10.1109/JEDS.2017.2785618ISI: 000423582900022OAI: oai:DiVA.org:kth-222398DiVA, id: diva2:1185073
Note

QC 20180223

Available from: 2018-02-23 Created: 2018-02-23 Last updated: 2018-05-24Bibliographically approved

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Hou, ShuobenHellström, Per-ErikZetterling, Carl-Mikael

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