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Scaling and modeling of high temperature 4H-SiC p-i-n photodiodes
KTH, School of Information and Communication Technology (ICT), Electronics.
KTH, School of Information and Communication Technology (ICT), Electronics.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Electronics.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-5845-3032
2018 (English)In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 6, no 1, p. 139-145, article id 8240922Article in journal (Refereed) Published
Abstract [en]

4H-SiC p-i-n photodiodes with various mesa areas (40,000μm2, 2500μm2, 1600μm2, and 400μm2) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 °C, 400 °C, and 500 °C. The capacitance and photo current (at 365 nm) of the photodiodes are directly proportional to the area. However, the dark current density increases as the device is scaled down due to the perimeter surface recombination effect. The photo to dark current ratio at the full depletion voltage of the intrinsic layer (-2.7 V) of the photodiode at 500 °C decreases 7 times as the size of the photodiode scales down 100 times. The static and dynamic behavior of the photodiodes are modeled with SPICE parameters at the four temperatures.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2018. Vol. 6, no 1, p. 139-145, article id 8240922
Keywords [en]
4H-SiC, high temperature, photodiode, scaling, Capacitance, Photodiodes, Silicon carbide, Dark current ratio, Full-depletion voltage, IV characteristics, Static and dynamic behaviors, Surface recombinations, Silicon compounds
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-223196DOI: 10.1109/JEDS.2017.2785618ISI: 000423582900022Scopus ID: 2-s2.0-85040046747OAI: oai:DiVA.org:kth-223196DiVA, id: diva2:1186293
Funder
Knut and Alice Wallenberg Foundation
Note

Export Date: 13 February 2018; Article; Correspondence Address: Hou, S.; School of Information and Communication Technology, KTH Royal Institute of TechnologySweden; email: shuoben@kth.se; Funding details: Knut och Alice Wallenbergs Stiftelse; Funding details: KTH, Kungliga Tekniska Högskolan. QC 20180228

Available from: 2018-02-28 Created: 2018-02-28 Last updated: 2018-02-28Bibliographically approved

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Hou, ShuobenHellström, Per-ErikZetterling, Carl-MikaelÖstling, Mikael

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