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Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD
KTH, School of Engineering Sciences (SCI), Applied Physics. University of Bologna, Italy.
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2017 (English)In: 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE, 2017Conference paper, Published paper (Refereed)
Abstract [en]

We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley / multi-subband transport and TCAD models. The pros and cons of each, and the insights they can deliver, are illustrated with examples from recent technology developments and literature. Areas where improvements and implementations at TCAD level are most necessary are highlighted as well.

Place, publisher, year, edition, pages
IEEE, 2017.
Series
IEEE International Electron Devices Meeting, ISSN 2380-9248
National Category
Other Engineering and Technologies not elsewhere specified
Identifiers
URN: urn:nbn:se:kth:diva-224104ISI: 000424868900078Scopus ID: 2-s2.0-85045186482ISBN: 978-1-5386-3559-9 OAI: oai:DiVA.org:kth-224104DiVA, id: diva2:1189690
Conference
63rd IEEE Annual International Electron Devices Meeting (IEDM), DEC 02-06, 2017, San Francisco, CA
Funder
EU, FP7, Seventh Framework Programme, 619326
Note

QC 20180312

Available from: 2018-03-12 Created: 2018-03-12 Last updated: 2018-05-23Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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  • de-DE
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  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
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  • Other locale
More languages
Output format
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  • asciidoc
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