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Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
KTH, School of Electrical Engineering and Computer Science (EECS).
2018 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 51, no 10, article id 105111Article in journal (Refereed) Published
Abstract [en]

The instability of Al2O3/4H-SiC interface at various process temperatures and ambient is investigated by the annealing of Al2O3/4H-SiC in low vacuum conditions as well as in N-2 environments. Atomic layer deposited Al2O3 on a 4H-SiC substrate with 3, 6 and 10 nm of thicknesses is treated at 300, 500, 700 and 900 degrees C under the vacuum level of 10(-1) torr. The as-deposited and annealed structures are analyzed using x-ray photoelectron spectroscopy. It is hypothesized that the minute quantity of oxygen present in low vacuum conditions diffuses through thin layers of Al2O3 and helps in forming SiO2 at the interface even at low temperatures (i.e. 300 degrees C), which plays a pivotal role in determining the electrical properties of the interface. It is also proved that the absence of oxygen in the ambient prevents the formation of SiO2 at low temperatures. Additionally, it is observed that Al-OH is present in as-deposited layers, which gradually reduces after annealing. However, at around 700 degrees C, the concentration of oxygen in the whole structure increases to maximum and reduces at 900 degrees C.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2018. Vol. 51, no 10, article id 105111
Keywords [en]
Al2O3/4H-SiC interface, oxygen diffusion, annealing, XPS
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-224005DOI: 10.1088/1361-6463/aaa9a1ISI: 000425627200003Scopus ID: 2-s2.0-85042358184OAI: oai:DiVA.org:kth-224005DiVA, id: diva2:1191489
Note

QC 20180319

Available from: 2018-03-19 Created: 2018-03-19 Last updated: 2018-03-19Bibliographically approved

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Usman, MuhammadSuvanam, Sethu Saveda

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Integrated devices and circuitsSchool of Electrical Engineering and Computer Science (EECS)
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