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Growth Rate of Crystal Surfaces with Several Dislocation Centers
KTH, School of Engineering Sciences (SCI), Mathematics (Dept.), Numerical Analysis, NA. University of Texas at Austin, TX, United States.
2018 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 18, no 3, p. 1917-1929Article in journal (Refereed) Published
Abstract [en]

We studied analytically and numerically the growth rate of a crystal surface growing by several screw dislocations. We observed some discrepancy between the growth rates computed by our level set method (J. Sci. Comput. 2015, 62.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2018. Vol. 18, no 3, p. 1917-1929
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Other Chemistry Topics
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URN: urn:nbn:se:kth:diva-224557DOI: 10.1021/acs.cgd.7b00833ISI: 000427203700075Scopus ID: 2-s2.0-85043243414OAI: oai:DiVA.org:kth-224557DiVA, id: diva2:1191761
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QC 20180320

Available from: 2018-03-20 Created: 2018-03-20 Last updated: 2018-04-16Bibliographically approved

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