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Assessment of 10 kV, 100 A Silicon Carbide MOSFET Power Modules
KTH, School of Electrical Engineering and Computer Science (EECS), Electric Power and Energy Systems. ABB Corp Res Ctr, S-72178 Vasteras, Sweden..ORCID iD: 0000-0001-9790-5524
ABB Corp Res Ctr, S-72178 Vasteras, Sweden..
ABB Corp Res Ctr, S-72178 Vasteras, Sweden..
2018 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 33, no 6, p. 5215-5225Article in journal (Refereed) Published
Abstract [en]

This paper presents a thorough characterization of 10 kV SiC MOSFET power modules, equipped with third-generation MOSFET chips and without external free-wheeling diodes, using the inherent SiC MOSFET body-diode instead. The static performance (e.g., IDS-VDS, IDS-VGS, C-V characteristics, leakage current, body-diode characteristics) is addressed by measurements at various temperatures. Moreover, the power module is tested in a simple chopper circuit with inductive load to assess the dynamic characteristics up to 7 kV and 120 A. The SiC MOSFET power module exhibits an on-state resistance of 40 m Omega at room-temperature and leakage current in the range of 100 nA, approximately one order of magnitude lower than that of a 6.5 kV Si-IGBT. The power module shows fast switching characteristics with the turn-on (turn-on loss) and turn-off (turn-off loss) times of 130 ns (89 mJ) and 145 ns (33 mJ), respectively, at 6.0 kV supply voltage and 100 A current. Furthermore, a peak short-circuit current of 900 A and a short-circuit survivability time of 3.5 mu s were observed. The extracted characterization results could serve as input for power electronic converter design and may support topology evaluation with realistic system performance predictability, using SiC MOSFET power modules in the energy transmission and distribution networks.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2018. Vol. 33, no 6, p. 5215-5225
Keywords [en]
Device characterization, power modules, short-circuit robustness, SiC mosfets, wide bandgap devices
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-225280DOI: 10.1109/TPEL.2017.2728723ISI: 000426014100055Scopus ID: 2-s2.0-85028878329OAI: oai:DiVA.org:kth-225280DiVA, id: diva2:1195787
Note

QC 20180406

Available from: 2018-04-06 Created: 2018-04-06 Last updated: 2018-04-06Bibliographically approved

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Johannesson, Daniel

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