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CMOS compatible W/CoFeB/MgO spin Hall nano-oscillators with wide frequency tunability
Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden..
KTH, School of Engineering Sciences (SCI), Applied Physics. NanOsc AB, S-16440 Kista, Sweden.
Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden..
Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden..
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 13, article id 132404Article in journal (Refereed) Published
Abstract [en]

We demonstrate low-operational-current W/Co20Fe60B20/MgO spin Hall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the beta-phase W (theta(SH) = -0.53), a very low threshold current density of 3.3 x 10(7) A/cm(2) can be achieved. Together with their very wide frequency tunability (7-28GHz), promoted by a moderate perpendicular magnetic anisotropy, HiR-Si/W/CoFeB based SHNOs are potential candidates for wide-band microwave signal generation. Their CMOS compatibility offers a promising route towards the integration of spintronic microwave devices with other on-chip semiconductor microwave components.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2018. Vol. 112, no 13, article id 132404
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-226793DOI: 10.1063/1.5022049ISI: 000429072800015Scopus ID: 2-s2.0-85044750620OAI: oai:DiVA.org:kth-226793DiVA, id: diva2:1203794
Funder
Swedish Foundation for Strategic Research Swedish Research CouncilKnut and Alice Wallenberg FoundationEU, FP7, Seventh Framework Programme, 307144
Note

QC 20180504

Available from: 2018-05-04 Created: 2018-05-04 Last updated: 2018-05-04Bibliographically approved

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