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Trench-Confined InP-Based Epitaxial Regrowth Using Metal-Organic Vapor-Phase Epitaxy
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
RISE Acreo, Box 1070, SE-16425 Kista, Sweden..
RISE Acreo, Box 1070, SE-16425 Kista, Sweden..
RISE Acreo, Box 1070, SE-16425 Kista, Sweden..
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2018 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 215, no 8, article id 1700454Article in journal (Refereed) Published
Abstract [en]

In this study, an area-selective metal-organic vapor-phase epitaxy (MOVPE) for trench-confined InP-based epitaxial regrowth in-between arrayed rectangular-shaped device elements is reported. Test structures are fabricated to investigate the influence of MOVPE growth and other processing parameters on regrowth control, doping incorporation, and morphology. For correctly chosen crystallographic mesa orientation and mask geometry, good control of growth selectivity, layer morphology, and doping concentration can be achieved, although with an enhanced and non-constant growth rate. This is discussed in terms of orientation-dependent growth rate and loading effects. In addition, a selective etch and regrowth approach which allows for the processing of field-effect transistors of significance for spatial light modulators with trench-integrated driver electronics is successfully implemented.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2018. Vol. 215, no 8, article id 1700454
Keywords [en]
InP, metal-organic vapor-phase epitaxy, patterned substrate epitaxy, spatial light modulator
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-227772DOI: 10.1002/pssa.201700454ISI: 000430922700016Scopus ID: 2-s2.0-85040201992OAI: oai:DiVA.org:kth-227772DiVA, id: diva2:1205458
Conference
Compound Semiconductor Week (CSW), MAY 14-18, 2017, Berlin, GERMANY
Note

QC 20180514

Available from: 2018-05-14 Created: 2018-05-14 Last updated: 2018-05-14Bibliographically approved

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Hammar, Mattias

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