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500 °c, High Current Linear Voltage Regulator in 4H-SiC BJT Technology
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0001-8108-2631
2018 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 4, p. 548-551Article in journal (Refereed) Published
Abstract [en]

This letter reports on a fully integrated 2-linear voltage regulator operational in a wide temperature range from 25 °C up to 500 °C fabricated in 4H-SiC technology. The circuit provides a stable output voltage with less than 1% variation in the entire temperature range. This letter demonstrates the first power supply solution providing both high-temperature (up to 500 °C) and high-load driving capabilities (up to 2).

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018. Vol. 39, no 4, p. 548-551
Keywords [en]
Bipolar junction transistor (BJT), high-temperature IC, linear voltage regulator (LVR), silicon carbide (SiC)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-227638DOI: 10.1109/LED.2018.2805229ISI: 000428689000022Scopus ID: 2-s2.0-85041829681OAI: oai:DiVA.org:kth-227638DiVA, id: diva2:1205520
Funder
Swedish Foundation for Strategic Research Knut and Alice Wallenberg Foundation
Note

QC 20180514

Available from: 2018-05-14 Created: 2018-05-14 Last updated: 2018-05-14Bibliographically approved

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Elahipanah, HosseinRodriguez, SaulZetterling, Carl-Mikael

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