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500 degrees C, High Current Linear Voltage Regulator in 4H-SiC BJT Technology
Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA..
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT). KTH Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Stockholm, Sweden..ORCID iD: 0000-0001-8108-2631
2018 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 4, p. 548-551Article in journal (Refereed) Published
Abstract [en]

This letter reports on a fully integrated 2-A linear voltage regulator operational in a wide temperature range from 25 degrees C up to 500 degrees C fabricated in 4H-SiC technology. The circuit provides a stable output voltage with less than 1% variation in the entire temperature range. This letter demonstrates the first power supply solution providing both high-temperature (up to 500 degrees C) and high-load driving capabilities (up to 2 A).

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2018. Vol. 39, no 4, p. 548-551
Keyword [en]
Bipolar junction transistor (BJT), high-temperature IC, linear voltage regulator (LVR), silicon carbide (SiC)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-226194DOI: 10.1109/LED.2018.2805229ISI: 000428689000022Scopus ID: 2-s2.0-85041829681OAI: oai:DiVA.org:kth-226194DiVA, id: diva2:1207141
Note

QC 20180518

Available from: 2018-05-18 Created: 2018-05-18 Last updated: 2018-05-18Bibliographically approved

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Elahipanah, HosseinRodriguez, SaulZetterling, Carl-Mikael

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