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Electrical characteristics of the epitaxial and Al implanted 4H-SiC PiN diodes with etched zone termination in the temperature range from 300K to 623K.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
(English)Manuscript (Other academic)
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-7163OAI: oai:DiVA.org:kth-7163DiVA, id: diva2:12089
Note
QC 20110114Available from: 2005-09-29 Created: 2005-09-29 Last updated: 2011-01-14Bibliographically approved
In thesis
1. Termination and passivation of Silicon Carbide Devices.
Open this publication in new window or tab >>Termination and passivation of Silicon Carbide Devices.
2005 (English)Licentiate thesis, comprehensive summary (Other scientific)
Abstract [en]

Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. Despite this tremendous development in SiC technology, the reliability issues like device degradation or high channel mobility still remain to be solved.

This thesis focuses on SiC surface passivation and termination, a topic which is very important for the utilisation of the full potential of this semiconductor. Three dielectrics with high dielectric constants, Al2O3, AlN and TiO2, were deposited on SiC with different techniques. The structural and electrical properties of the dielectrics were measured and the best insulating layers were then deposited on fully processed and well characterised 1.2 kV 4H SiC PiN diodes. For the best Al2O3 layers, the leakage current was reduced to half its value and the breakdown voltage was extended by 0.5 kV, reaching 1.6 kV, compared to non passivated devices.

As important as the proper choice of dielectric material is a proper surface preparation prior to deposition of the insulator. In the thesis two surface treatments were tested, a standard HF termination used in silicon technology and an exposure to UV light from a mercury lamp. The second technique is highly interesting since a substantial improvement was observed when UV light was used prior to the dielectric deposition. Moreover, UV light stabilized the surface and reduced the leakage current by a factor of 100 for SiC devices after 10 Mrad γ ray exposition. The experiments indicate also that the measured leakage currents of the order of pA are dominated by surface leakage.

Place, publisher, year, edition, pages
Stockholm: KTH, 2005. p. vii, 55
Series
Trita-FTE, ISSN 0284-0545 ; 2005:3
Keywords
Silicon Carbide, SiC, passivation, dielectric materials
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-439 (URN)
Presentation
2005-09-30, C1, KTH-Electrum, Isafjordsgatan 22, Kista, 10:15
Opponent
Supervisors
Note
QC 20110114Available from: 2005-09-29 Created: 2005-09-29 Last updated: 2011-01-14Bibliographically approved

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