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Atomically Thin Mesoporous In2O3-x/In2S3 Lateral Heterostructures Enabling Robust Broadband-Light Photo-Electrochemical Water Splitting
DUT, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, State Key Lab Fine Chem, Dalian 116024, Peoples R China..
DUT, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, State Key Lab Fine Chem, Dalian 116024, Peoples R China..
DUT, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, State Key Lab Fine Chem, Dalian 116024, Peoples R China..
DUT, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, State Key Lab Fine Chem, Dalian 116024, Peoples R China..
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2018 (English)In: Advanced Energy Materials, ISSN 1614-6832, Vol. 8, no 9, article id 1701114Article in journal (Refereed) Published
Abstract [en]

Atomically thin 2D heterostructures have opened new realms in electronic and optoelectronic devices. Herein, 2D lateral heterostructures of mesoporous In2O3-x/In2S3 atomic layers are synthesized through the in situ oxidation of In2S3 atomic layers by an oxygen plasma-induced strategy. Based on experimental observations and theoretical calculations, the prolonged charge carrier lifetime and increased electron density reveal the efficient photoexcited carrier transport and separation in the In2O3-x/In2S3 layers by interfacial bonding at the atomic level. As expected, the synergistic structural and electronic modulations of the In2O3-x/In2S3 layers generate a photocurrent of 1.28 mA cm(-2) at 1.23 V versus a reversible hydrogen electrode, nearly 21 and 79 times higher than those of the In2S3 atomic layers and bulk counterpart, respectively. Due to the large surface area, abundant active sites, broadband-light harvesting ability, and effective charge transport pathways, the In2O3-x/In2S3 layers build efficient pathways for photoexcited charge in the 2D semiconductive channels, expediting charge transport and kinetic processes and enhancing the robust broadband-light photo-electrochemical water splitting performance. This work paves new avenues for the exploration and design of atomically thin 2D lateral heterostructures toward robust photo-electrochemical applications and solar energy utilization.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2018. Vol. 8, no 9, article id 1701114
Keywords [en]
atomically thin layers, charge separation, In2O3-x/In2S3, lateral heterostructures, photo-electrochemical water splitting
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-226792DOI: 10.1002/aenm.201701114ISI: 000429318400001OAI: oai:DiVA.org:kth-226792DiVA, id: diva2:1208970
Note

QC 20180521

Available from: 2018-05-21 Created: 2018-05-21 Last updated: 2018-05-21Bibliographically approved

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