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Scalable fabrication of single nanowire devices using crack-defined shadow mask lithography
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.ORCID iD: 0000-0002-8821-6759
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.ORCID iD: 0000-0001-6731-3886
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.ORCID iD: 0000-0002-0525-8647
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.ORCID iD: 0000-0001-9552-4234
(English)In: Article in journal (Refereed) Submitted
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-228312OAI: oai:DiVA.org:kth-228312DiVA, id: diva2:1209037
Note

QC 20180522

Available from: 2018-05-21 Created: 2018-05-21 Last updated: 2018-05-22Bibliographically approved
In thesis
1. Crack-junctions: Bridging the gap between nano electronics and giga manufacturing
Open this publication in new window or tab >>Crack-junctions: Bridging the gap between nano electronics and giga manufacturing
2018 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Obtaining both nanometer precision of patterning and parallel fabrication on wafer-scale is currently not possible in conventional fabrication schemes. Just as we are looking beyond semiconductor technologies for next-generation electronics and photonics, our efforts turn to new ways of producing electronic and photonic interfaces with the nanoscale. Nanogap electrodes, with their accessible free-space and connection to electronic circuits, have attracted a lot of attention recently as scaffolds to study, sense, or harness the smallest stable structures found in nature: molecules. The main achievement of this thesis is the development of a novel type of nanogap electrodes, the so called crack-junction (CJ). Crack-junctions are unparalleled at realizing nanogap widths smaller than 10 nm and can be fabricated based exclusively on conventional wafer-scale microfabrication equipment and processes. These characteristics of crack-junctions stem from the sequence of two entirely self-induced steps participating in the formation of the nanogaps: 1./ a splitting step, during which a pre-strained electrode-bridge structure fractures to generate two new electrode surfaces facing one another, followed by 2./ a dividing step during which mechanical relaxation of the elastic strain induces displacement of these surfaces away from one another in a precisely controlled way. The positions of the resulting nanogaps are precisely controlled by designing the electrode-bridges with notched constrictions that localize crack formation. Based on the crack-junction methodology, two continuation concepts are developed and demonstrated. In the first concept, the crack-junction methodology is extended to electrode materials that are ductile, rather than brittle. This led to the development of a new type of break junction, the so called crack-defined break junction (CDBJ). In the second concept, the crack-defined nanogap structures realized by the crack-junction methodology are utilized as a shadow mask for the fabrication of single nanowire devices. The optical-lithography-compatible processes developed here to produce high-density arrays of individually-adjusted crack-junctions, crack-defined break junctions, and single-nanowire devices, provide viable solutions to bridge 10−9 nanoelectronics and 109 giga manufacturing.

Place, publisher, year, edition, pages
KTH Royal Institute of Technology, 2018. p. 92
Series
TRITA-EECS-AVL ; 2018:42
Keywords
nanotechnology, nanoelectronics, nanogap electrodes, molecular electronics, nanoplasmonics, crack-junctions, break junctions, nanowires, parallel fabrication, lithography, fracture, crack
National Category
Nano Technology
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-228316 (URN)978-91-7729-795-6 (ISBN)
Public defence
2018-06-15, Q2, Osquldas väg 10, Stockholm, 10:00 (English)
Opponent
Supervisors
Note

QC 20180522

Available from: 2018-05-22 Created: 2018-05-21 Last updated: 2018-05-22Bibliographically approved

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Niklaus, FrankStemme, Göran

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