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Extreme radiation hard thin film CZTSSe solar cell
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2018 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, E-ISSN 1879-3398, Vol. 185, p. 16-20Article in journal (Refereed) Published
Abstract [en]

In this work, we have demonstrated the extreme radiation hardness of thin film CZTSSe solar cells. Thin film solar cells with CZTSSe, CZTS and CIGS absorber layers were irradiated with 3 MeV protons. No degradation in device parameters was observed until a displacement damage dose of 2 × 1010 MeV/g for CZTS and CZTSSe. CIGS solar cells degraded by 13% at the same dose. For the highest proton dose both the CZTSSe and CZTS degraded by 16% while CIGS suffered from 34% degradation in efficiency. The degradation in efficiency maybe attributed to the reduction in the minority carrier lifetime due to radiation induced lattice defects. Comparisons with previously available literature show that our CZTS technology has superior radiation hardness by about two orders of magnitude compared to existing state of the art Si and GaAs technology.

Place, publisher, year, edition, pages
Elsevier, 2018. Vol. 185, p. 16-20
Keywords [en]
CZTSSe, Proton radiation, Radiation hardness, Space solar cells
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Other Engineering and Technologies not elsewhere specified
Identifiers
URN: urn:nbn:se:kth:diva-228694DOI: 10.1016/j.solmat.2018.05.012Scopus ID: 2-s2.0-85046621751OAI: oai:DiVA.org:kth-228694DiVA, id: diva2:1210947
Note

QC 20180530

Available from: 2018-05-30 Created: 2018-05-30 Last updated: 2018-05-30Bibliographically approved

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Hallén, Anders

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