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Scaling of 4H-SiC p-i-n Photodiodes for High Temperature Applications
KTH.
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-8108-2631
KTH.
2017 (English)In: 2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), IEEE , 2017Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
IEEE , 2017.
Series
IEEE Device Research Conference Proceedings, ISSN 1548-3770
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-226243ISI: 000428501700054Scopus ID: 2-s2.0-85028060479ISBN: 978-1-5090-6328-4 OAI: oai:DiVA.org:kth-226243DiVA, id: diva2:1211080
Conference
75th Annual Device Research Conference (DRC), JUN 25-28, 2017, Univ Notre Dame, South Bend, IN
Note

QC 20180530

Available from: 2018-05-30 Created: 2018-05-30 Last updated: 2018-11-13Bibliographically approved

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Hou, ShuobenHellström, Per-ErikZetterling, Carl-Mikael

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Hou, ShuobenHellström, Per-ErikZetterling, Carl-MikaelÖstling, Mikael
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