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GOI fabrication for monolithic 3D integration
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.ORCID iD: 0000-0003-0568-0984
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2018 (English)In: 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, Institute of Electrical and Electronics Engineers (IEEE), 2018, Vol. 2018, p. 1-3Conference paper, Published paper (Refereed)
Abstract [en]

A low temperature (Tmax=350 °C) process for Ge on insulator (GOI) substrate fabrication with thicknesses of less than 25 nm is reported in this work. The process is based on a single step epitaxial growth of a Ge/SiGe/Ge stack on Si, room temperature wafer bonding, and an etch-back process using Si0.5Ge0.5 as an etch-stop layer. Using this technique, GOI substrates with surface roughness below 0.5 nm, thickness nonuniformity of less than 3 nm, and residual p-type doping of less than 1016 cm-3 are achieved. Ge pFETs are fabricated (Tmax=600 °C) on the GOI wafer with 70% yield. The devices exhibit a negative threshold voltage of-0.18 V and 60% higher mobility than the SOI pFET reference devices.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018. Vol. 2018, p. 1-3
Keywords [en]
3D Integration, GOI, GOI MOSFET, Selective Etching, Wafer Bonding
National Category
Other Engineering and Technologies
Identifiers
URN: urn:nbn:se:kth:diva-230046DOI: 10.1109/S3S.2017.8309201Scopus ID: 2-s2.0-85047768082ISBN: 9781538637654 OAI: oai:DiVA.org:kth-230046DiVA, id: diva2:1216094
Conference
2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, Hyatt Regency San Francisco Airport Hotel Burlingame, United States, 16 October 2017 through 18 October 2017
Note

QC 20180611

Available from: 2018-06-11 Created: 2018-06-11 Last updated: 2018-06-11Bibliographically approved

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Abedin, AhmadAsadollahi, AliGaridis, KonstantinosJayakumar, GaneshHellström, Per-Erik

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