Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition
2004 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Applied Surface Science, Vol. 224, no 1-4, 46-50 p.Article in journal (Refereed) Published
The epitaxial quality of non-selective and selective deposition of Si1-x-yGexCy (0 less than or equal to x less than or equal to 0.30, 0 less than or equal to y less than or equal to 0.02) layers has been optimized by using high-resolution reciprocal lattice mapping (HRRLM). The main goal was to incorporate a high amount of substitutional carbon atoms in Si or Si1-xGex matrix without creating defects. The carbon incorporation behavior was explained by chemical and kinetic effects of the reactant gases during epitaxial process. Although high quality epitaxial Si1-yCy layers can be deposited, lower electron mobility compared to Si layers was observed.
Place, publisher, year, edition, pages
2004. Vol. 224, no 1-4, 46-50 p.
Chemical vapor deposition; Epitaxy; High-resolution reciprocal lattice mapping; SiGeC alloys
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-7503DOI: 10.1016/j.apsusc.2003.08.026ISI: 000189273900009ScopusID: 2-s2.0-1142280329OAI: oai:DiVA.org:kth-7503DiVA: diva2:12549
QC 20100715. Konferens: 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya Univ Symposion, Nagoya, Japan, 2003.2007-09-262007-09-262012-03-22Bibliographically approved