Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels
2006 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 27, no 6, 466-468 p.Article in journal (Refereed) Published
The hole mobilities of SiGe and SiGeC channel pMOSFETs fabricated on ultrathin silicon-on-insulator substrates are investigated and compared with reference Si channel devices. The total thickness of the fully depleted Si/SiGe(C)/Si body structure is similar to 25 nm. All devices demonstrated a near ideal subthreshold behavior, and the drive current and mobility were increased with more than 60% for SiGe and SiGeC channels. When comparing SIMOX and UNIBOND substrates, no significant difference could be detected.
Place, publisher, year, edition, pages
2006. Vol. 27, no 6, 466-468 p.
Fully depleted (FD); Heterostructure; Mobility; MOSFETs; SiGe; SiGeC; Silicon-on-insulator (SOI) technology
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-7508DOI: 10.1109/LED.2006.874763ISI: 000238070500014ScopusID: 2-s2.0-33744733389OAI: oai:DiVA.org:kth-7508DiVA: diva2:12554
QC 201007152007-09-262007-09-262010-09-16Bibliographically approved