Noise and Mobility Characteristics of Bulk and Fully Depleted SOI pMOSFETs using Si or SiGe channels
2006 (English)In: Electrochemical Society Transactions, Vol. 3, no 7, 67-72 p.Article in journal (Refereed) Published
State of the art bulk and fully depleted SOI Si and SiGe channel pMOSFET devices with gate lengths ranging from 0.1 to 200 μm were fabricated and analyzed in terms of drain current drivability, mobility and noise performance. In general the SOI devices demonstrated superior mobility and significantly reduced I/f noise compared to bulk devices maintaining a well controlled short channel effects due to the ultra thin body.
Place, publisher, year, edition, pages
2006. Vol. 3, no 7, 67-72 p.
Bulk devices; Drain current drivability; Gate lengths; Short channel effects; Carrier mobility; Channel capacity; Gates (transistor); Semiconducting silicon; Semiconducting silicon compounds; Signal noise measurement; Silicon on insulator technology; MOSFET devices
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-7509DOI: 10.1149/1.2355795ScopusID: 2-s2.0-33846986504OAI: oai:DiVA.org:kth-7509DiVA: diva2:12555
QC 20100715. Konferens: SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting; Cancun; 29 October 2006 through 3 November 2006; Code 69092.2007-09-262007-09-262010-09-16Bibliographically approved