Leakage current reduction in 80 nm biaxially strained Si nMOSFETs on in-situ doped SiGe virtual substrates
2007 (English)In: ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference 2008, 2007, 319-322 p.Conference paper (Refereed)
We present a comprehensive study of biaxially strained (up to similar to 3 GPa stress) Si nMOSFETs down to 80 nm gatelength. Well behaved 80 nm devices with expected strain-induced electrical enhancement were demonstrated. Special emphasis was put on investigation of substrate junction leakage and source to drain leakage. In-situ doped wells and channel profiles demonstrated superior substrate junction leakage for the relaxed SiGe substrates compared to conventional implantation. The source to drain leakage in 80 nm devices was effectively reduced by increment of channel doping and rotation of the channel direction.
Place, publisher, year, edition, pages
2007. 319-322 p.
, Proceedings of the European Solid-State Device Research Conference, ISSN 1930-8876
Drain current; Leakage currents; Semiconducting silicon; Semiconductor doping; Substrates; Channel doping; Drain leakage; Substrate junction leakage; MOSFET devices
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-7510DOI: 10.1109/ESSDERC.2007.4430942ISI: 000252831900070ScopusID: 2-s2.0-39549092303ISBN: 978-1-4244-1123-8OAI: oai:DiVA.org:kth-7510DiVA: diva2:12556
ESSDERC07 - 2007 37th European Solid State Device Research Conference; Munich; 11 September 2007 through 13 September 2007; Category number 07EX1746; Code 71427
QC 201007152007-09-262007-09-262010-09-16Bibliographically approved