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Effect of substrate bias on properties of HiPIMS deposited vanadium nitride films
KTH, School of Electrical Engineering and Computer Science (EECS), Space and Plasma Physics. Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland.
KTH, School of Electrical Engineering and Computer Science (EECS), Space and Plasma Physics. Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland.ORCID iD: 0000-0002-8153-3209
2018 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 663, p. 126-130Article in journal (Refereed) Published
Abstract [en]

We report on the effect of varying the substrate bias on the morphology, composition, structural, and electrical properties of vanadium nitride films deposited by high power impulse magnetron sputtering (HiPIMS). The optimum substrate bias is found to be −50 V, which gives the highest film density, the lowest electrical resistivity, and the lowest surface roughness at the highest deposition rate. We demonstrate how increasing the substrate bias voltage leads to a highly textured film. The preferred orientation of the film changes from (111) to (200) as the substrate bias voltage is increased. An X-ray pole scan shows that the (111) plane grows parallel to the SiO2 substrate when the substrate is grounded while it is gradually replaced by the (200) plane as the substrate bias voltage is increased up to −200 V. The lowest electrical resistivity is measured as 48.4 μΩ cm for the VN film deposited under substrate bias of −50 V. This is among the lowest room temperature values that have been reported for a VN film. We found that the nitrogen concentration presents a decline by 6.5 percentage points as the substrate bias is changed from ground to −200 V. 

Place, publisher, year, edition, pages
Elsevier B.V. , 2018. Vol. 663, p. 126-130
Keywords [en]
High power impulse magnetron sputtering, HiPIMS, Magnetron sputtering, Substrate bias, Vanadium nitride, Deposition rates, Electric conductivity, Electric grounding, Nitrides, Silica, Surface roughness, Vanadium compounds, High power impulse magnetron sputtering (HIPIMS), Nitrogen concentrations, Preferred orientations, Substrate bias voltages, Vanadium nitride films, Vanadium nitrides, Bias voltage
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-236658DOI: 10.1016/j.tsf.2018.06.060ISI: 000443012200019Scopus ID: 2-s2.0-85051934605OAI: oai:DiVA.org:kth-236658DiVA, id: diva2:1262808
Funder
VINNOVA, 2014-04876
Note

Export Date: 22 October 2018; Article; CODEN: THSFA; Correspondence Address: Gudmundsson, J.T.; Science Institute, University of Iceland, Dunhaga 3, IS-107, Iceland; email: tumi@hi.is; Funding details: 2014-04876, VINNOVA; Funding details: 130029; Funding text: The authors are thankful to Dr. Arni S. Ingason for assistance with the interpretation of the polar figure data. This work was partially supported by the University of Iceland Research Fund for Doctoral Students, the Icelandic Research Fund Grant No. 130029 , and the Swedish Government Agency for Innovation Systems (VINNOVA) contract no. 2014-04876 .

Available from: 2018-11-13 Created: 2018-11-13 Last updated: 2018-11-13Bibliographically approved

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