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Electrical characterization of InGaAs/InP quantum wells by scanning capacitance microscopy
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2018 (English)In: Microscopy of Semiconducting Materials 2003, CRC Press, 2018, p. 645-648Chapter in book (Refereed)
Abstract [en]

In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate 5, 10, and 20 nm InGaAs/InP (lattice matched) quantum wells grown by metalorganic vapour phase epitaxy and sandwiched between Si-doped InP barriers. It is demonstrated that SCM is capable of detecting the electrons accumulated in the quantum wells and that the SCM signal shows a systematic trend for the wells of different width. It is also shown that at appropriate tip-sample DC biases depletion regions in the barriers adjacent to the wells are clearly resolved.

Place, publisher, year, edition, pages
CRC Press, 2018. p. 645-648
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Physical Sciences
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URN: urn:nbn:se:kth:diva-238336DOI: 10.1201/9781351074636Scopus ID: 2-s2.0-85053350389ISBN: 9781351083089 (print)ISBN: 0750309792 (print)ISBN: 9781315895536 (print)OAI: oai:DiVA.org:kth-238336DiVA, id: diva2:1263345
Note

QC 20181115

Available from: 2018-11-15 Created: 2018-11-15 Last updated: 2018-11-15Bibliographically approved

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Anand, Srinivasan

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Maknys, KestutisDouhéret, OlivierAnand, Srinivasan
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