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High efficiency MAPbI(3-x)Cl(x) perovskite solar cell via interfacial passivation
Fudan Univ, Ctr Micronano Syst, State Key Lab ASIC & Syst, SIST, Shanghai 200433, Peoples R China..
Fudan Univ, Ctr Micronano Syst, State Key Lab ASIC & Syst, SIST, Shanghai 200433, Peoples R China..
KTH, School of Electrical Engineering and Computer Science (EECS). IPack VINN Excellence Ctr, Royal Inst Technol KTH, S-16440 Stockholm, Sweden..
Fudan Univ, Ctr Micronano Syst, State Key Lab ASIC & Syst, SIST, Shanghai 200433, Peoples R China..ORCID iD: 0000-0003-3910-4184
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2018 (English)In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 10, no 40, p. 18909-18914Article in journal (Refereed) Published
Abstract [en]

The trap states at the interface between perovskite and charge-transport layer have a great influence on the performance of perovskite solar cells. Here, a high efficiency MAPbI(3-x)Cl(x) perovskite solar cell has been demonstrated, by introducing a thin layer of LiF or PbF2 between the SnO2/perovskite. Improved charge collection and reduced interfacial charge recombination are realized, leading to remarkable rises of both open-circuit voltage (V-oc) and short-circuit current (J(sc)). This successful interfacial passivation paved a new way to fabricate high performance perovskite solar cells with large V-oc.

Place, publisher, year, edition, pages
Royal Society of Chemistry, 2018. Vol. 10, no 40, p. 18909-18914
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Physical Sciences
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URN: urn:nbn:se:kth:diva-239090DOI: 10.1039/c8nr05504aISI: 000448344100001PubMedID: 30283942Scopus ID: 2-s2.0-85055074023OAI: oai:DiVA.org:kth-239090DiVA, id: diva2:1264888
Note

QC 20181121

Available from: 2018-11-21 Created: 2018-11-21 Last updated: 2018-11-21Bibliographically approved

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Yang, KunlongZheng, Li-rong

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