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Low toxic Cu2GeS3/InP quantum dot sensitized infrared solar cells
KTH, School of Biotechnology (BIO), Theoretical Chemistry and Biology.
KTH, School of Biotechnology (BIO), Theoretical Chemistry and Biology.ORCID iD: 0000-0001-6005-2302
KTH, School of Biotechnology (BIO), Theoretical Chemistry and Biology. Royal Inst Technol KTH, Sch Biotechnol, Dept Theoret Chem & Biol, S-10691 Stockholm, Sweden..
KTH, School of Biotechnology (BIO), Theoretical Chemistry and Biology. Uppsala Univ, Dept Phys & Astron, Box 516, SE-75120 Uppsala, Sweden..ORCID iD: 0000-0002-1763-9383
2018 (English)In: Journal of Renewable and Sustainable Energy, ISSN 1941-7012, E-ISSN 1941-7012, Vol. 10, no 4, article id 043710Article in journal (Refereed) Published
Abstract [en]

Type-II Cu2GeS3/InP core/shell quantum dots (QDs) are designed using density functional theory and synthesized by a hot injection method in order to enhance the power conversion efficiency of quantum dot sensitized solar cells. The low toxicity and an absorption extending to the infrared region are key aspects of the importance of these QDs. The longer absorption achieved for type-II Cu2GeS3/InP QDs compared to single core Cu2GeS3 QDs is achieved by optimization of the band alignment. This leads to a more efficient carrier separation and a suppression of the electron-hole recombination. The results show that the efficiency and the electron injection rate constant increase by more than 5 and 2 times, respectively.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2018. Vol. 10, no 4, article id 043710
National Category
Energy Engineering
Identifiers
URN: urn:nbn:se:kth:diva-240217DOI: 10.1063/1.5044608ISI: 000443601600037Scopus ID: 2-s2.0-85052677166OAI: oai:DiVA.org:kth-240217DiVA, id: diva2:1271371
Note

QC 20181217

Available from: 2018-12-17 Created: 2018-12-17 Last updated: 2018-12-17Bibliographically approved

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Huang, JingÅgren, Hans

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