Large–area, three–state, binary amplitude and binary phase vertical–cavity multiple quantum well electroabsorption modulator
2007 (English)In: Optics Express, ISSN 1094-4087, Vol. 15, no 14, 8566-8575 p.Article in journal (Refereed) Published
We present the design and characterization of a large optical modulator array based on GaAs multiple quantum wells for amplitude and phase modulation. The device shows two high-reflectance states with a phase difference close to 180 degrees for use as a binary phase modulator. It also shows a third, low-reflectance state for use as an amplitude modulator. It is segmented into 64 pixels in a single row, giving an active area of 2mm x 5mm. We discuss the device performance as a ternary binary amplitude and binary phase modulator, including contrast ratio and uniformity, and show that a voltage swing of only 5V is needed to drive it.
Place, publisher, year, edition, pages
2007. Vol. 15, no 14, 8566-8575 p.
Phase modulation; Semiconducting gallium arsenide; Semiconductor quantum wells
IdentifiersURN: urn:nbn:se:kth:diva-7631DOI: 10.1364/OE.15.008566ISI: 000248393900008OAI: oai:DiVA.org:kth-7631DiVA: diva2:12716
QC 201008022007-11-122007-11-122010-08-02Bibliographically approved