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Multimode scanning near-field photoluminescence spectroscopy of InGaN quantum wells
KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.ORCID iD: 0000-0002-4606-4865
KTH, School of Engineering Sciences (SCI), Applied Physics.
KTH, School of Engineering Sciences (SCI), Applied Physics.ORCID iD: 0000-0002-5007-6893
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2018 (English)In: 2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID), IEEE , 2018, p. 93-95Conference paper, Published paper (Refereed)
Abstract [en]

Multimode scanning near-field photoluminescence spectroscopy was developed and applied to study carrier localization and dynamics in m-plane InGaN quantum wells. The study showed that localized hole states maintain properties of extended bands, radiative and nonradiative carrier lifetimes are spatially nonuniform, and hole diffusion is anisotropic.

Place, publisher, year, edition, pages
IEEE , 2018. p. 93-95
Keywords [en]
InGaN, near-field, localization, recombination, diffusion
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-241348ISI: 000454636400029Scopus ID: 2-s2.0-85057087653OAI: oai:DiVA.org:kth-241348DiVA, id: diva2:1280417
Conference
1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018; Hilton Sandestin Beach Golf Resort and Spa Mirimar Beach; United States; 22 August 2018 through 24 August 2018
Note

QC 20190118

Available from: 2019-01-18 Created: 2019-01-18 Last updated: 2019-01-18Bibliographically approved

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Marcinkevičius, SauliusMensi, MounirIvanov, Ruslan

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