Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Enhanced Photoconductivity of SIGE-Trilayer Stack by Retrenching Annealing Conditions
KTH, School of Electrical Engineering and Computer Science (EECS), Space and Plasma Physics. University of Iceland, Iceland.ORCID iD: 0000-0002-8153-3209
Show others and affiliations
2018 (English)In: 2018 International Semiconductor Conference (CAS), Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 61-64, article id 8539775Conference paper, Published paper (Refereed)
Abstract [en]

We studied the effect of short term furnace annealing over the photoconductive properties of tristacked layer i.e. TiO2/(SiGe/TiO2)3. The structure was prepared by depositing alternate layers of TiO2 and SiGe films, using direct-current magnetron sputtering technique. A transmission electron microscopy and grazing incidence spectroscopy was used to analyze the morphology of the structure. Photoconductive properties were studied by measuring photocurrent spectra at different applied voltages and temperatures. Tristack layers were obtained with 5-10 nm SiGe nanocrystals (NCs) by annealing at 600 °C for 5 min. No sign of SiO2 formation was found inside stacked layers. A maximum in the photocurrent spectra was observed at 994 nm at 300 K but it red-shifted gradually to 1045 nm with decrease in temperature to 100 K. This transition in peak maxima is attributed to SiGe NCs, due to lattice vibration and to contribution of non-radiative recombination at low temperatures.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 61-64, article id 8539775
Keywords [en]
Annealing, Magnetron sputtering, Nanocrystals, Photoconductivity, SiGe, TiO2
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-241499DOI: 10.1109/SMICND.2018.8539775Scopus ID: 2-s2.0-85059632155ISBN: 9781538644829 (print)OAI: oai:DiVA.org:kth-241499DiVA, id: diva2:1282321
Conference
41st International Semiconductor Conference, CAS 2018, Sinaia, Romania, 10 October 2018 through 12 October 2018
Note

QC 20190124

Available from: 2019-01-24 Created: 2019-01-24 Last updated: 2019-01-24Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records BETA

Gudmundsson, Jon Tomas

Search in DiVA

By author/editor
Gudmundsson, Jon Tomas
By organisation
Space and Plasma Physics
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 2 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf