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Optical activity and defect/dopant evolution in ZnO implanted with Er
Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Phys, N-0316 Oslo, Norway..ORCID iD: 0000-0003-0602-9624
Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Phys, N-0316 Oslo, Norway..ORCID iD: 0000-0001-5988-5980
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-8760-1137
Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Phys, N-0316 Oslo, Norway..
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2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 118, no 12, article id 125703Article in journal (Refereed) Published
Abstract [en]

The effects of annealing on the optical properties and defect/dopant evolution in wurtzite (0001) ZnO single crystals implanted with Er ions are studied using a combination of Rutherford backscattering/channeling spectrometry and photoluminescence measurements. The results suggest a lattice recovery behavior dependent on ion dose and involving formation/evolution of an anomalous multipeak defect distribution, thermal stability of optically active Er complexes, and Er outdiffusion. An intermediate defect band occurring between the surface and ion-induced defects in the bulk is stable up to 900 degrees C and has a photoluminescence signature around 420 nm well corresponding to Zn interstitials. The optical activity of the Er atoms reaches a maximum after annealing at 700 degrees C but is not directly associated to the ideal Zn site configuration, since the Er substitutional fraction is maximal already in the as-implanted state. In its turn, annealing at temperatures above 700 degrees C leads to dissociation of the optically active Er complexes with subsequent outdiffusion of Er accompanied by the efficient lattice recovery.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2015. Vol. 118, no 12, article id 125703
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-243654DOI: 10.1063/1.4931423ISI: 000362565800073OAI: oai:DiVA.org:kth-243654DiVA, id: diva2:1286005
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QC 20190205

Available from: 2019-02-05 Created: 2019-02-05 Last updated: 2019-02-05Bibliographically approved

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Hallén, Anders

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