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Growth, Electrical and Optical Properties of SnO2:F on ZnO, Si and Porous Si Structures
Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil..
Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil.;CETEC Univ Fed Reconcavo Bahia, BR-44380000 Cruz Das Almas, BA, Brazil..
KTH, School of Engineering Sciences (SCI), Mathematics (Dept.). KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.ORCID iD: 0000-0002-9050-5445
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2009 (English)In: NANOTECH CONFERENCE & EXPO 2009, VOL 1, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: FABRICATION, PARTICLES, CHARACTERIZATION, MEMS, ELECTRONICS AND PHOTONICS / [ed] Laudon, M Romanowicz, B, CRC PRESS-TAYLOR & FRANCIS GROUP , 2009, p. 352-+Conference paper, Published paper (Refereed)
Abstract [en]

In this work we have analyzed the optical absorption of the ZnO and SnO2:F (FTO) films and applied them in porous silicon light-emitting diodes. The absorption and energy gap were calculated by employing the projector augmented wave method [1] within the local density approximation and with a modeled on-site self-interaction-like correction potential within the LDA+U-S/C [2]. Experiment and theory show a good agreement when the optical absorption and optical energy gap are considered. A layer of FTO is deposited by spray pyrolysis on top of porous Si (PSi) or ZnO/(PSi) in order to make the LEDs. The morphology and roughness of the films are analyzed by Atomic Force Microscopy before and after the FTO deposition. The electrical and optical properties are studied by characteristics curves J x V, and electroluminescence intensity versus bias.

Place, publisher, year, edition, pages
CRC PRESS-TAYLOR & FRANCIS GROUP , 2009. p. 352-+
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-242877ISI: 000273296000096Scopus ID: 2-s2.0-70450203719OAI: oai:DiVA.org:kth-242877DiVA, id: diva2:1289200
Conference
2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009; Houston, TX; United States; 3 May 2009 through 7 May 2009
Note

QC 20190215

Available from: 2019-02-15 Created: 2019-02-15 Last updated: 2019-02-15Bibliographically approved

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