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Investigation of Tm2Oj as a gate dielectric for Ge MOS devices
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
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2018 (English)In: ECS Transactions, Electrochemical Society, 2018, Vol. 86, no 7, p. 67-73Conference paper, Published paper (Refereed)
Abstract [en]

In this work atomic layer deposited TnOj has been investigated as a high-k dielectric for Ge-based gate stacks. It is shown that when Tm203 is deposited on high-quality Ge/Ge02 gates, the interface state density of the gate stack is degraded. A series of post-deposition anneals are studied in order to improve the interface state density of Ge/GeO/TmjOs gates, and it is demonstrated that a rapid thermal anneal in O2 ambient can effectively reduce the interface state density to below 5-10" cmeV1 without increasing the equivalent oxide thickness. Fixed charge density in Ge/GeOx/Tm20j gates has also been investigated, and it is shown that while O2 post-deposition anneal improves the interface state density, the fixed charge density is degraded.

Place, publisher, year, edition, pages
Electrochemical Society, 2018. Vol. 86, no 7, p. 67-73
Series
ECS Transactions, ISSN 1938-6737 ; 86
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-246529DOI: 10.1149/08607.0067ecstScopus ID: 2-s2.0-85058463674ISBN: 9781607685395 (print)OAI: oai:DiVA.org:kth-246529DiVA, id: diva2:1297475
Conference
8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting, 30 September 2018 through 4 October 2018
Note

QC 20190320

Available from: 2019-03-20 Created: 2019-03-20 Last updated: 2019-03-20Bibliographically approved

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Zurauskaite, LauraHellström, Per-ErikÖstling, Mikael

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  • apa
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