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Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation
KTH, School of Electrical Engineering and Computer Science (EECS), Space and Plasma Physics.ORCID iD: 0000-0002-8153-3209
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2019 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 479, p. 403-409Article in journal (Refereed) Published
Abstract [en]

We investigate the effect of room-temperature hydrogen-plasma treatment on the photoconductivity of SiGe nanoparticles sandwiched within SiO 2 layers. An increase in photocurrent intensity of more than an order magnitude is observed after the hydrogen plasma treatment. The enhancement is attributed to neutralization of dangling bonds at the nanoparticles and to passivation of nonradiative defects in the oxide matrix and at SiGe/matrix interfaces. We find that increasing the partial pressure of hydrogen to pressures where H 3 + and H 2 + were the dominant ions results in increased photocurrent.

Place, publisher, year, edition, pages
Elsevier, 2019. Vol. 479, p. 403-409
Keywords [en]
Hydrogen plasma, Nanoparticles, Passivation, Photocurrent, SiGe, SiO 2
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-246404DOI: 10.1016/j.apsusc.2019.02.096ISI: 000464931800049Scopus ID: 2-s2.0-85061822672OAI: oai:DiVA.org:kth-246404DiVA, id: diva2:1301259
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QC 20190401

Available from: 2019-04-01 Created: 2019-04-01 Last updated: 2019-05-14Bibliographically approved

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Gudmundsson, Jon Tomas

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