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Gallium indium phosphide nanostructures with suppressed photoluminescence for applications in nonlinear optics
KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics.
KTH, School of Engineering Sciences (SCI), Applied Physics.
KTH, School of Engineering Sciences (SCI), Applied Physics.
KTH, School of Engineering Sciences (SCI), Applied Physics.ORCID iD: 0000-0003-2136-4914
2018 (English)In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2018Conference paper, Published paper (Refereed)
Abstract [en]

Nanostructured GaInP shows remarkable second-order nonlinear properties. By measuring the second harmonic generation before and after stimulating intrinsic photobleaching, we observed suppressed photoluminescence and unchanged nonlinear properties, making it suitable for low-noise applications. 

Place, publisher, year, edition, pages
OSA - The Optical Society , 2018.
Keywords [en]
Gallium alloys, III-V semiconductors, Indium alloys, Nonlinear optics, Photobleaching, Photoluminescence, Semiconducting indium phosphide, Semiconductor alloys, Gallium indium phosphide, Low-noise applications, Nano-structured, Nonlinear properties, Second orders, Indium phosphide
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-247436DOI: 10.1364/FIO.2018.JTu3A.83Scopus ID: 2-s2.0-85059406720ISBN: 9781943580460 (print)OAI: oai:DiVA.org:kth-247436DiVA, id: diva2:1302063
Conference
Frontiers in Optics, FIO 2018, 16 September 2018 through 20 September 2018
Note

QC 20190403

Available from: 2019-04-03 Created: 2019-04-03 Last updated: 2019-05-20Bibliographically approved

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De Luca, EleonoraVisser, DennisAnand, SrinivasanSwillo, Marcin

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Output format
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