Intrinsic defects and transition metal impurities in GaAs
2004 (English)In: Journal of Magnetism and Magnetic Materials, ISSN 0304-8853, Vol. 272, no 3, 1961-1962 p.Article in journal (Refereed) Published
Thermodynamics of intrinsic point defects, 3d-transition metal (TM) impurities, and various defect pairs in GaAs have been studied by means of the locally self-consistent Green's function method. Antisite defects, As-Ga, are found to be the most energetically favorable defects in the As-rich GaAs. The studied TM impurities (V, Cr, Mn, and Fe) are found to form substitutional alloys on the Ga sublattice. The magnetic moments of TM impurities in the GaAs host are calculated under the assumption that orbital moments of TM are quenched and the total magnetization is due to spill ordering of electrons in the crystal. Thermodynamic possibility of formation of complexes between TM-atoms is investigated.
Place, publisher, year, edition, pages
2004. Vol. 272, no 3, 1961-1962 p.
defects, magnetism, semiconductors
Other Materials Engineering Physical Chemistry
IdentifiersURN: urn:nbn:se:kth:diva-7892DOI: 10.1016/j.jmmm.2003.12.1198ISI: 000222236800139ScopusID: 2-s2.0-23044440896OAI: oai:DiVA.org:kth-7892DiVA: diva2:13056
QC 201507282008-01-152008-01-152015-07-28Bibliographically approved