Magnetic properties of 3d impurities in GaAs
2007 (English)In: Journal of Magnetism and Magnetic Materials, ISSN 0304-8853, Vol. 310, no 2, 2120-2122 p.Article in journal (Refereed) Published
Electronic structure, thermodynamic, and magnetic properties of 3d-transition metal (TM) impurities in GaAs have been studied from first principles using Green's function approach. The studied TM impurities (V, Cr, Mn, and Fe) are found to form substitutional alloys on the Ga sublattice. The possibility of raising the Curie temperature TC in (GaMn) As by co-doping it with Cr impurities was examined on the basis of total energy difference between the disordered local moment (DLM) and the ferromagnetically ordered (FM) spin configurations. The calculated Curie temperature and magnetic moment have maxima for GaAs doped with Cr and Mn. The magnetic properties of Mn-doped GaAs are shown to be more sensitive to antisite As defects than those of Cr-doped GaAs. However, the Cr impurities are sensitive to the presence of acceptor defects, such as vacancies on the Ga sublattice. The investigation of the electronic structure of pseudo-ternary alloys (Ga(1-x-y)MnxCry) As has shown a mutual compensation of Mn and Cr impurities. Therefore, in order to reach the highest critical temperature, GaAs has to be separately doped with Cr or Mn impurities. The GaAs doped with Fe is found to be non-ferromagnetic.
Place, publisher, year, edition, pages
Elsevier, 2007. Vol. 310, no 2, 2120-2122 p.
spintronic, ab initio calculation, magnetic semiconductor
Other Materials Engineering Physical Chemistry
IdentifiersURN: urn:nbn:se:kth:diva-7894DOI: 10.1016/j.jmmm.2006.10.791ISI: 000247720400080ScopusID: 2-s2.0-33847670091OAI: oai:DiVA.org:kth-7894DiVA: diva2:13058
The International Conference on Magnetism
QC 201006242008-01-152008-01-152014-08-29Bibliographically approved