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Feedback-free electromigrated tunneling junctions from crack-defined gold nanowires
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.ORCID iD: 0000-0003-1072-2691
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.ORCID iD: 0000-0002-2278-1368
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems. KTH.ORCID iD: 0000-0001-6731-3886
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2019 (English)In: Feedback-free electromigrated tunneling junctions from crack-defined gold nanowires, 2019Conference paper, Published paper (Refereed)
Abstract [en]

Tunneling junctions are pairs of electrodes separated by gaps of a few nanometers (< 3 nm) that allow electrons to tunnel across the gap. Tunneling junctions are of great importance for applications such as label-free biomolecule sensing and single molecule electronics, but their fabrication remains difficult and laborious. In this paper, we present a simple 2-stage process for the fabrication of tunneling junctions consisting of electrode pairs made of gold (Au). This is achieved by combining a novel methodology for fabricating crack-defined Au nanowires at wafer-scale with a constant voltage, feedback-free electromigration procedure to form tunneling nanogaps free of debris.

Place, publisher, year, edition, pages
2019.
Keywords [en]
tunneling junctions, crack junction, electromigration
National Category
Nano Technology
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-250572OAI: oai:DiVA.org:kth-250572DiVA, id: diva2:1309577
Conference
32nd IEEE International Conference on Micro Electro Mechanical Systems, Seoul, Korea, from 27-31 January 2019.
Note

QCR 20190820

Available from: 2019-04-30 Created: 2019-04-30 Last updated: 2019-08-20Bibliographically approved

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Pagliano, SimoneGota, FabrizioRaja, Shyamprasad NatarajanDubois, Valentin J.Stemme, GöranNiklaus, Frank

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