A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer
2005 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 483-485, 905-908 p.Article in journal (Refereed) Published
4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p(+) regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.
Place, publisher, year, edition, pages
2005. Vol. 483-485, 905-908 p.
bipolar junction transistor; extrinsic base; epitaxial regrowth
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-7936DOI: 10.4028/www.scientific.net/MSF.483-485.905ISI: 000228549600215ScopusID: 2-s2.0-35148858873OAI: oai:DiVA.org:kth-7936DiVA: diva2:13119
QC 20100819. 5th European Conference on Silicon Carbide and Related Materials. Bologna, ITALY. AUG 31-SEP 04, 2004 2008-01-302008-01-302011-10-12Bibliographically approved