Electrically robust ultralong nanowires of NiSi, Ni2Si and Ni31Si12
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 4, 043104- p.Article in journal (Refereed) Published
Mass fabrication of directly accessible, ultralong, uniform Si nanowires is realized by employing a controllable and reproducible method based on standard Si technology. High-conductivity polycrystalline Ni-silicide nanowires around 30 nm by 30 nm in cross section, able to support extremely high currents at similar to 10(8) A/cm(2), are obtained by means of solid-state reaction of the Si nanowires with subsequently deposited Ni films. By properly adjusting the Ni film thickness, NiSi, Ni2Si, and Ni31Si12 nanowires characterized with distinct resistivity and temperature coefficient of resistance are obtained. Upon annealing, the electrical continuity of the nanowires breaks at temperatures about 0.7 times the melting points of the silicides.
Place, publisher, year, edition, pages
2006. Vol. 88, no 4, 043104- p.
Annealing, Deposition, Electric resistance, Fabrication, Nanostructured materials, Polycrystalline materials, Silicon, Temperature distribution, Thin films
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-7948DOI: 10.1063/1.2168017ISI: 000234968600079ScopusID: 2-s2.0-31544436663OAI: oai:DiVA.org:kth-7948DiVA: diva2:13136
QC 201009102008-02-052008-02-052010-09-16Bibliographically approved