Ni2Si nanowires of extraordinarily low resistivity
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 21, 213103- p.Article in journal (Refereed) Published
Ultralong, polycrystalline Ni2Si nanowires are fabricated by combining sidewall transfer lithography with self-aligned silicidation. Upon formation at 500 degrees C, the nanowires that are 400 mu m long with a rectangular cross section of 37.5 by 25.3 nm are characterized by a resistivity of 25 +/- 1 mu Omega cm which is similar to the value for Ni2Si thin films. Further annealing at 800 degrees C results in an extraordinarily low wire resistivity of 10 mu Omega cm. Such a drastic decrease in resistivity is attributed to a significant grain growth and a low density of defects in the nanowires.
Place, publisher, year, edition, pages
2006. Vol. 88, no 21, 213103- p.
Annealing, Crystal defects, Grain growth, Lithography, Nickel compounds, Polycrystalline materials, Silicon compounds, Density of defects, Rectangular cross section, Sidewall transfer lithography, Silicidation
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-7949DOI: 10.1063/1.2207222ISI: 000237846800072ScopusID: 2-s2.0-33744518182OAI: oai:DiVA.org:kth-7949DiVA: diva2:13137
QC 201009232008-02-052008-02-052010-09-23Bibliographically approved