Robust, scalable self-aligned platinum silicide process
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 14, 142114- p.Article in journal (Refereed) Published
A robust, scalable PtSix process is developed. The process consists of two consecutive annealing steps in a single run; the first is silicidation of Pt films on Si substrates carried out in N-2, whereas the second is surface oxidation of the resultant PtSix in O-2. By adequately adjusting the temperature during the oxidation step, a protective SiOx hard mask forms on PtSix of different thicknesses and compositions. Such a surface oxidation is absent for Pt on SiO2 isolation, which is crucial for the subsequent selective wet etch for a self-aligned process. Ultralong PtSix nanowires are fabricated using this robust self-aligned process.
Place, publisher, year, edition, pages
2006. Vol. 88, no 14, 142114- p.
Annealing, Composition, Etching, Oxidation, Platinum compounds, Substrates, Platinum silicide processes, Pt Six nanowires, Surface oxidations, Wet etch
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-7950DOI: 10.1063/1.2194313ISI: 000236612000055ScopusID: 2-s2.0-33646692940OAI: oai:DiVA.org:kth-7950DiVA: diva2:13138
QC 201009232008-02-052008-02-052010-09-23Bibliographically approved