Schottky-barrier height tuning by means of ion implantation into preformed silicide films followed by drive-in anneal
2007 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 28, no 7, 565-568 p.Article in journal (Refereed) Published
An experimental study on Schottky-barrier height (SBH) tuning using ion implantation followed by drive-in anneal of As, B, In, and P in preformed NiSi and PtSi films is presented. Measured on B-implanted NiSi and PtSi Schottky diodes, the effective SBH on n-type Si is altered to similar to 1.0 eV. For As- and P-implanted diodes, the SBH on p-type Si can be tuned to around 0.9 eV The process window for the most pronounced SBH modification is dopant dependent.
Place, publisher, year, edition, pages
2007. Vol. 28, no 7, 565-568 p.
dopant segregation, Schottky barrier (SB) lowering, Schottky diode, silicide
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-7951DOI: 10.1109/LED.2007.900295ISI: 000247643900009ScopusID: 2-s2.0-34447282256OAI: oai:DiVA.org:kth-7951DiVA: diva2:13139
QC 201009232008-02-052008-02-052010-09-23Bibliographically approved