A comparative study of two different schemes to dopant segregation at NiSi/Si and PtSi/Si interfaces for Schottky barrier height lowering
2008 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 55, no 1, 396-403 p.Article in journal (Refereed) Published
An experimental study is presented to compare two different schemes used to incorporate a high concentration of dopants at the silicide/silicon interface for NiSi and PtSi, i.e., dopant segregation, with the purpose of lowering the Schottky barrier height (SBH) of the contact systems. Specifically, the interfacial dopant is introduced either through silicidation-induced dopant segregation (SIDS) or by silicide as diffusion source (SADS). For the latter, a postimplantation drive-in anneal is needed. For both silicide systems, the dopant segregation gives rise to a predominant effect, leading to an effective SBH that is independent of the original SBHs of PtSi and NiSi, which differs by 0.2 eV. Scheme SUDS is relatively simple in processing, but the silicidation process is dopant-dependent, leading to local variations of silicide formation. Scheme SADS addresses the adverse effect of dopant on silicidation by separating silicidation from dopant incorporation.
Place, publisher, year, edition, pages
2008. Vol. 55, no 1, 396-403 p.
dopant segregation; Schottky barrier (SB) lowering; Schottky diode; silicide
Computer and Information Science
IdentifiersURN: urn:nbn:se:kth:diva-7952DOI: 10.1109/TED.2007.911080ISI: 000252059000040ScopusID: 2-s2.0-37749045251OAI: oai:DiVA.org:kth-7952DiVA: diva2:13140
QC 201008192008-02-052008-02-052012-03-21Bibliographically approved