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Laser restructuring and photoluminescence of glass-clad GaSb/Si-core optical fibres
Norwegian Univ Sci & Technol, Dept Phys, N-7491 Trondheim, Norway.;Norwegian Univ Sci & Technol, PoreLab, N-7491 Trondheim, Norway..
Norwegian Univ Sci & Technol, Dept Phys, N-7491 Trondheim, Norway.;Norwegian Univ Sci & Technol, PoreLab, N-7491 Trondheim, Norway..
KTH, School of Engineering Sciences (SCI), Applied Physics.ORCID iD: 0000-0001-7688-1367
Clemson Univ, Dept Mat Sci & Engn, Clemson, SC 29634 USA..
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2019 (English)In: Nature Communications, ISSN 2041-1723, E-ISSN 2041-1723, Vol. 10, article id 1790Article in journal (Refereed) Published
Abstract [en]

Semiconductor-core optical fibres have potential applications in photonics and optoelectronics due to large nonlinear optical coefficients and an extended transparency window. Laser processing can impose large temperature gradients, an ability that has been used to improve the uniformity of unary fibre cores, and to inscribe compositional variations in alloy systems. Interest in an integrated light-emitting element suggests a move from Group IV to III-V materials, or a core that contains both. This paper describes the fabrication of GaSb/Si core fibres, and a subsequent CO2 laser treatment that aggregates large regions of GaSb without suppressing room temperature photoluminescence. The ability to isolate a large III-V crystalline region within the Si core is an important step towards embedding semiconductor light sources within infrared light-transmitting silicon optical fibre.

Place, publisher, year, edition, pages
NATURE PUBLISHING GROUP , 2019. Vol. 10, article id 1790
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Physical Sciences
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URN: urn:nbn:se:kth:diva-251483DOI: 10.1038/s41467-019-09835-1ISI: 000464976200003PubMedID: 30996257Scopus ID: 2-s2.0-85064540314OAI: oai:DiVA.org:kth-251483DiVA, id: diva2:1317309
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QC 20190522

Available from: 2019-05-22 Created: 2019-05-22 Last updated: 2019-05-29Bibliographically approved

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Laurell, FredrikFokine, MichaelGibson, Ursula J.

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